av H Gest · 1993 · Citerat av 13 — Arnon DI (1991) Photosynthetic electron transport: Emergence of a concept, 1949–59. FEMS Microbiol Lett 41: 109–114 FEMS Microbiol Lett 49: 451–454.

LetPub Scientific Journal Selector (2018-2021), IEEE ELECTRON DEVICE LETTERS published in 1980, UNITED STATES.

IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design. Ozbek and B. J. Baliga, “Planar nearly ideal edge-termination technique for GaN devices,” IEEE Electron Device Lett., vol. 32, no. 3, pp. 300–302, Mar. 2011. [28] Jul 5, 2018 COVID-19 Remote Access Support: Learn More about expanded access to ACS Publications research.

Article Google Scholar. 32. Kaczmarek, Ł et al. Revisiting the Medicinal Devices (SCMPMD) to express its opinion on the suitability/safety of the Lett. (Suppl.), 10,129, 1982.

IEEE ELECTRON DEVICE LETTERS, VOL. 38, NO. 4, APRIL 2017. 513. Ga2O3 MOSFETs Using Spin-On-Glass. Source/Drain Doping Technology. Ke Zeng

Second, we designed a smaller version of the microfluidic devices av R Neira · 2002 · Citerat av 276 — studied using the protocols of transmission electron mi- Transmission electron microscopic images of the fat using a low-level laser device during a lipo- Lett. 51: 1214, 1983. 24.

The performance of graphene-based electronic devices is critically affected by the quality of the graphene-metal IEEE Electron Device Lett, 28, 282 (2007).

With Regrown Ohmic Contacts. ZhanboXia The performance of graphene-based electronic devices is critically affected by the quality of the graphene-metal IEEE Electron Device Lett, 28, 282 (2007). In very small systems like a single electron transistor, sometimes thermal fluctuations allow beyond the Free Energy Difference with a Single-Electron Device Lett. 122, 150604 – Published 18 April 2019.

VI. X. Wang, E. behaviour in an optoelectronical device when light propagates through the device, the film of the alphabetic letter followed by a period. For example, see heading and US Letter templates for LaTeX and Microsoft. Word. Electron Device Lett., vol. 20, pp.
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This publication publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, 小木虫论坛-sci期刊点评专栏：拥有来自国内各大院校、科研院所的博硕士研究生和企业研发人员对期刊的专业点评，覆盖了8000+ sci期刊杂志的专业点评信息，为国内外学术科研人员论文投稿、期刊选择等提供了专业的建议。 IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging Journal abbreviation: Electron device letters.

Page(s): 826 - 828. Date of Publication: 26 June 2014. LetPub Scientific Journal Selector (2018-2021), IEEE ELECTRON DEVICE LETTERS published in 1980, UNITED STATES. Jul 12, 2018 Maintaining decent device performance after integration is of paramount Y. Cai , X. Zou, C. Liu, and K. M. Lau, IEEE Electron Device Lett.
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al., Appl. Phys. Lett. 81, 1905 (2002) IEEE Electron Device Letters, Vol. 35, No. 5, pp. 515-517, 2014. (BibTeX) (More info); S. Johansson, E. Memisevic, L. E. Wernersson, E. Lind: High-Frequency devices in 4H-SiC for high-temperature stable circuit operation, Electron. Lett.